tm 3-1 HFA1110 750mhz, low distortion unity gain, closed loop buffer the HFA1110 is a unity gain closed loop buffer that achieves -3db bandwidth of 750mhz, while offering excellent video performance and low distortion. manufactured on intersil s proprietary complementary bipolar uhf-1 process, the HFA1110 also offers very fast slew rate, and high output current. it is one more example of intersil s intent to enhance its leadership position in products for high speed signal processing applications. the HFA1110 s settling time of 11ns to 0.1%, low distortion and ability to drive capacitive loads make it an ideal ?sh a/d driver. the HFA1110 is an enhanced, pin compatible upgrade for the ad9620, ad9630, clc110, el2072, buf600 and buf601. for buffer applications requiring a standard op amp pinout, or selectable gain (-1, +1, +2), see the hfa1112 data sheet. for output limiting see the hfa1113 data sheet. for military grade product please refer to the HFA1110/883 data sheet. pinout HFA1110 (soic) top view features wide -3db bandwidth. . . . . . . . . . . . . . . . . . . . . . 750mhz very fast slew rate . . . . . . . . . . . . . . . . . . . . . . 1300v/ s fast settling time (0.2%) . . . . . . . . . . . . . . . . . . . . . . 7ns high output current . . . . . . . . . . . . . . . . . . . . . . . . . 60ma fixed gain of +1 gain flatness (100mhz) . . . . . . . . . . . . . . . . . . . . 0.03db differential phase . . . . . . . . . . . . . . . . . . . 0.025 degrees differential gain . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.04% 3rd harmonic distortion (50mhz). . . . . . . . . . . . . . -80dbc 3rd order intercept (100mhz) . . . . . . . . . . . . . . . . 30dbm applications video switching and routing rf/if processors driving flash a/d converters high-speed communications impedance transformation line driving radar systems pin descriptions name pin number description v+ 1 positive supply opt v+ 2 optional positive supply nc 3 no connection in 4 input v- 5 negative supply opt v- 6 optional negative supply nc 7 no connection out 8 output v+ opt v+ nc in 1 2 3 4 8 7 6 5 out nc opt v- v- + - ordering information part number (brand) temp. range ( o c) package pkg. no. HFA1110ib (h1110i) -40 to 85 8 ld soic m8.15 HFA1110eval high speed buffer dip evaluation board data sheet february 1999 file number 2944.7 caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 321-724-7143 | intersil and design is a trademark of intersil corporation. | copyright intersil corporation 2000
3-2 absolute maximum ratings thermal information voltage between v+ and v- . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12v dc input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v supply output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60ma operating conditions temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . -40 o c to 85 o c thermal resistance (typical, note 1) ja ( o c/w) soic package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158 maximum junction temperature (plastic package) . . . . . . . .150 o c maximum storage temperature range . . . . . . . . . . -65 o c to 150 o c maximum lead temperature (soldering 10s) . . . . . . . . . . . . 300 o c (soic - lead tips only) caution: stresses above those listed in ?bsolute maximum ratings may cause permanent damage to the device. this is a stress only rating and operatio n of the device at these or any other conditions above those indicated in the operational sections of this speci?ation is not implied. note: 1. ja is measured with the component mounted on an evaluation pc board in free air. electrical speci?ations v supply = 5v, r l = 100 ? , unless otherwise speci?d parameter test conditions temp ( o c) min typ max units input characteristics output offset voltage (note 2) 25 - 8 25 mv full - - 35 mv output offset voltage drift full - 10 - v/ o c psrr 25 39 45 - db full 35 - - db input noise voltage (note 2) 100khz 25 - 14 - nv/ hz input noise current (note 2) 100khz 25 - 51 - pa/ hz input bias current (note 2) 25 - 10 40 a full - - 65 a input resistance 25 25 50 - k ? input capacitance 25 - 2 - pf transfer characteristics gain v out = 2v p-p 25 0.980 0.990 1.02 v/v full 0.975 - 1.025 v/v dc non-linearity (note 2) 2v full scale 25 - 0.003 - % output characteristics output voltage (note 2) 25 3.0 3.3 - v full 2.5 3.0 - v output current (note 2) r l = 50 ? 25, 85 50 60 - ma -40 35 50 - ma power supply characteristics supply voltage range full 4.5 - 5.5 v supply current (note 2) 25 - 21 26 ma full - - 33 ma ac characteristics -3db bandwidth (note 2) v out = 0.2v p-p 25 - 750 - mhz slew rate v out = 5v p-p 25 - 1300 - v/ s full power bandwidth (note 2) v out = 4v p-p 25 - 150 - mhz gain flatness (note 2) to 100mhz 25 - 0.03 - db to 30mhz 25 - 0.01 - db linear phase deviation (note 2) dc to 100mhz 25 - 0.3 - degrees 2nd harmonic distortion (note 2) 50mhz, v out = 2v p-p 25 - -60 - dbc 3rd harmonic distortion (note 2) 50mhz, v out = 2v p-p 25 - -80 - dbc 3rd order intercept (note 2) 100mhz 25 - 30 - dbm HFA1110
3-3 application information pc board layout the frequency performance of this ampli?r depends a great deal on the amount of care taken in designing the pc board. the use of low inductance components such as chip resistors and chip capacitors is strongly recommended, while a solid ground plane is a must! attention should be given to decoupling the power supplies. a large value (10 f) tantalum in parallel with a small value chip (0.1 f) capacitor works well in most cases. terminated microstrip signal lines are recommended at the input and output of the device. output capacitance, such as that resulting from an improperly terminated transmission line will degrade the frequency response of the ampli?r and may cause oscillations. in most cases, the oscillation can be avoided by placing a resistor (r s ) in series with the output. see the ?ecommended r s vs load capacitance graph for speci? recommendations. an example of a good high frequency layout is the evaluation board shown below. evaluation board an evaluation board is available for the HFA1110 (part number HFA1110eval). please contact your local sales of?e for information. the layout and schematic of the board are shown here: note: the soic version may be evaluated in the dip board by using a soic-to-dip adapter such as aries electronics part number 08-350000-10. -1db gain compression 100mhz 25 - 14 - dbm reverse gain (s 12 , note 2) 100mhz, v out = 1v p-p 25 - -60 - db transient response rise time v out = 0.5v step 25 - 0.5 - ns overshoot (note 2) v out = 1.0v step, input signal rise/fall = 1ns 25 - 2.5 - % 0.2% settling time (note 2) v out = 1v to 0v 25 - 7 - ns 0.1% settling time (note 2) v out = 1v to 0v 25 - 11 - ns overdrive recovery time 25 - 15 - ns differential gain 3.58mhz, r l = 75 ? 25 - 0.04 - % differential phase 3.58mhz, r l = 75 ? 25 - 0.025 - degrees note: 2. see typical performance curves for more information. electrical speci?ations v supply = 5v, r l = 100 ? , unless otherwise speci?d (continued) parameter test conditions temp ( o c) min typ max units 50 ? 1 2 3 4 8 7 6 5 +5v 0.1 f10 f 50 ? out 0.1 f 10 f -5v HFA1110 in r s schematic diagram bottom layout top layout 1 HFA1110
3-4 typical performance curves v supply = 5v, t a = 25 o c, r l = 100 ?, unless otherwise speci?d figure 1. small signal pulse response figure 2. large signal pulse response figure 3. frequency response figure 4. frequency response for various load resistors figure 5. frequency response for various output voltages figure 6. -3db bandwidth vs temperature time (5ns/div.) 120 80 40 0 -40 -80 -120 output voltage (mv) 1.2 0.8 0.4 0 -0.4 -0.8 -1.2 time (5ns/div.) output voltage (v) 2 1 0 -1 -2 -3 -4 -5 -6 -7 -8 0 200m 400m 600m 800m 1g frequency (hz) 0 -45 -90 -135 -180 -225 -270 gain (db) phase (degrees) phase v out = 200mv p-p gain v out = 200mv p-p v out = 1v p-p 6 3 0 -3 -6 1m 10m 100m 1g -360 -270 -180 -90 0 gain (db) frequency (hz) phase (degrees) r l = 1k ? r l = 100 ? r l = 50 ? r l = 1k ? 2 1 0 -1 -2 -3 -4 -5 -6 -7 -8 1m 10m 100m 1g gain (db) frequency (hz) v out = 200mv p-p v out = 2.5v p-p v out = 4v p-p 890 870 850 830 810 790 770 750 730 temperature ( o c) -50 -30 -10 10 30 50 70 90 110 130 710 bandwidth (mhz) HFA1110
3-5 figure 7. gain flatness figure 8. deviation from linear phase figure 9. reverse gain and phase (s 12 ) figure 10. two-tone, third order intermodulation intercept figure 11. second harmonic distortion vs p out figure 12. third harmonic distortion vs p out typical performance curves v supply = 5v, t a = 25 o c, r l = 100 ?, unless otherwise speci?d (continued) 0.25 0.20 0.15 0.10 0.05 0 -0.05 -0.10 1m 10m 100m 200m frequency (hz) gain (db) 2.0 1.5 1.0 0.5 0 -0.5 -1.0 -1.5 -2.0 0 15m 30m 45m 60m 75m 90m 105m 120m 135m 150m frequency (hz) deviation (degrees) -20 -30 -40 -50 -60 0 200m 400m 600m 800m 1g frequency (hz) +135 +90 +45 0 gain (db) phase gain v out = 1v p-p phase (degrees) 50 40 30 20 10 0 50 100 150 200 250 300 350 400 frequency (mhz) intercept point (dbm) 0 -30 -40 -50 -60 -70 -80 -90 -100 -5 -3 -1 1 3 5 7 9 11 13 output power (dbm) distortion (dbc) 100 mhz 50 mhz 30 mhz 100 mhz 50 mhz 30 mhz -30 -40 -50 -60 -70 -80 -90 -100 -5 -3 -1 1 3 5 7 9 11 13 output power (dbm) distortion (dbc) HFA1110
3-6 figure 13. settling response figure 14. recommended series output resistor vs c load figure 15. overshoot vs input risetime figure 16. integral linearity error figure 17. supply current vs supply voltage figure 18. supply current vs temperature typical performance curves v supply = 5v, t a = 25 o c, r l = 100 ?, unless otherwise speci?d (continued) settling error (%) time (ns) -5 0 5 10 15 20 25 30 35 40 45 0 -0.2 -0.4 -0.8 0.2 0.4 0.8 v out = 1v r s ( ? ) c l (pf) 50 45 40 35 30 25 20 15 10 5 0 0 40 80 120 160 200 240 280 320 360 v o = 2.0v p-p v o = 1.0v p-p v o = 0.5v p-p 21 18 15 12 9 6 3 200 300 400 500 600 700 800 900 1000 overshoot (%) input rise time (ps) 0 0.04 0.02 0 -0.02 -3.0 -2.0 -1.0 0 1.0 2.0 3.0 input voltage (v) error (%) -0.04 r l = 1k ? r l = 100 ? r l = 200 ? total supply voltage (v+ - v-, v) 22 17 15 13 11 supply current (ma) 59 9 7 5 678 10 21 20 19 6 8 10 12 14 16 18 25 24 23 22 21 20 19 18 17 -60 -40 -20 0 20 40 60 80 100 120 temperature ( o c) supply current (ma) HFA1110
3-7 figure 19. bias current vs temperature figure 20. offset voltage vs temperature figure 21. output voltage vs temperature figure 22. input noise vs frequency typical performance curves v supply = 5v, t a = 25 o c, r l = 100 ?, unless otherwise speci?d (continued) 32 30 28 26 24 22 20 18 16 14 12 10 8 6 4 -60 -40 -20 0 20 40 60 80 100 120 bias current ( a) temperature ( o c) 10 9.8 9.6 9.4 9.2 9 8.8 8.6 8.4 8.2 8 7.8 -60 -40 -20 0 20 40 60 80 100 120 temperature ( o c) output offset voltage (mv) output voltage (v) temperature ( o c) 3.8 3.7 3.6 3.5 3.4 3.3 3.2 3.1 3 2.9 2.8 -60 -40 -20 0 20 40 60 80 100 120 +v out (r l = 100 ? ) +v out (r l = 50 ? ) |-v out |(r l = 100 ? ) |-v out |(r l = 50 ? ) noise voltage (nv/ hz) frequency (hz) noise current (pa/ hz) 100 80 60 40 20 0 100 1k 10k 100k 200 160 120 80 40 0 e ni i ni HFA1110
3-8 all intersil semiconductor products are manufactured, assembled and tested under iso9000 quality systems certi?ation. intersil semiconductor products are sold by description only. intersil corporation reserves the right to make changes in circuit design and/or spec ifications at any time with- out notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is b elieved to be accurate and reliable. however, no responsibility is assumed by intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of th ird parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of intersil or its subsidiari es. for information regarding intersil corporation and its products, see web site http://www.intersil.com die characteristics die dimensions: 63 mils x 44 mils x 19 mils 1600 m x 1130 m x 483 m metallization: type: metal 1: alcu(2%)/tiw thickness: metal 1: 8k ? 0.4k ? type: metal 2: alcu(2%) thickness: metal 2: 16k ? 0.8k ? passivation: type: nitride thickness: 4k ? 0.5k ? transistor count: 52 substrate potential (powered up): floating (recommend connection to v-) metallization mask layout HFA1110 v- nc nc out in nc nc v+ nc HFA1110
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